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首页> 外文OA文献 >Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlxGa1−xN/AlN/GaNAlxGa1−xN∕AlN∕GaN heterostructures
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Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlxGa1−xN/AlN/GaNAlxGa1−xN∕AlN∕GaN heterostructures

机译：金属 - 有机气相外延生长alxGa1-xN / alN / GaNalxGa1-xN / alN / GaN异质结构中二维电子气系统的照明和退火特性

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We studied the persistent photoconductivity (PPC) effect in AlxGa1−xN/AlN/GaNAlxGa1−xN∕AlN∕GaN heterostructures with two different Al compositions (x = 0.15x=0.15 and x = 0.25x=0.25). The two-dimensional electron gas formed at the AlN/GaNAlN∕GaN heterointerface was characterized by Shubnikov-de Haas and Hall measurements. Using optical illumination, we were able to increase the carrier density of the Al0.15Ga0.85N/AlN/GaNAl0.15Ga0.85N∕AlN∕GaN sample from 1.6×1012 to 5.9×1012 cm−21.6×1012to5.9×1012cm−2, while the electron mobility was enhanced from 9540 to 21 400 cm2/V s9540to21400cm2∕Vs at T = 1.6 KT=1.6K. The persistent photocurrent in both samples exhibited a strong dependence on illumination wavelength, being highest close to the band gap and decreasing at longer wavelengths. The PPC effect became fairly weak for illumination wavelengths longer than ∼ 530 nm∼530nm and showed a more complex response with an initial negative photoconductivity in the infrared region of the spectrum (λ>700 nm)(λ>700nm). The maximum PPC efficiency for 390 nm390nm illumination was 0.011% and 0.005% for Al0.25Ga0.75N/AlN/GaNAl0.25Ga0.75N∕AlN∕GaN and Al0.15Ga0.85N/AlN/GaNAl0.15Ga0.85N∕AlN∕GaN samples, respectively. After illumination, the carrier density could be reduced by annealing the sample. Annealing characteristics of the PPC effect were studied in the 20–280 K20–280K temperature range. We found that annealing at 280 K280K was not sufficient for full recovery of the carrier density. In fact, the PPC effect occurs in these samples even at room temperature. Comparing the measurement results of two samples, the Al0.25Ga0.75N/AlN/GaNAl0.25Ga0.75N∕AlN∕GaN sample had a larger response to illumination and displayed a smaller recovery with thermal annealing. This result suggests that the energy scales of the defect configuration-coordinate diagrams for these samples are different, depending on their Al composition.
机译：我们研究了具有两种不同Al成分（x = 0.15x = 0.15和x = 0.25x = 0.25）的AlxGa1-xN / AlN / GaNAlxGa1-xN ∕ AlN ∕ GaN异质结构中的持久光电导（PPC）效应。通过Shubnikov-de Haas和Hall测量来表征在AlN / GaNAlN ∕ GaN异质界面处形成的二维电子气。使用光学照明，我们能够将Al0.15Ga0.85N / AlN / GaNAl0.15Ga0.85N ∕ AlN ∕ GaN样品的载流子密度从1.6×1012增加到5.9×1012 cm−21.6×1012至5.9×1012cm−由图2可见，在T ＝ 1.6 KT ＝ 1.6K时，电子迁移率从9540增加到21 400 cm2 / V s9540到21400cm2 ∕ Vs。两个样品中的持久光电流都表现出对照明波长的强烈依赖性，在带隙附近最高，而在更长波长处降低。对于大于530nm〜530nm的照明波长，PPC效应变得相当弱，并且在光谱的红外区域（λ> 700nm）（λ> 700nm）表现出更复杂的响应，并具有初始的负光电导性。 Al0.25Ga0.75N / AlN / GaNAl0.25Ga0.75N0.75Al ∕ AlN ∕ GaN和Al0.15Ga0.85N / AlN / GaNAl0.15Ga0.85N ∕ AlN ∕ GaN对390 nm390nm照明的最大PPC效率为0.011％和0.005％样本。照射后，可通过对样品进行退火来降低载流子密度。在20–280 K20–280K温度范围内研究了PPC效应的退火特性。我们发现在280 K280K下进行退火不足以完全恢复载流子密度。实际上，即使在室温下，这些样品中也会发生PPC效应。比较两个样品的测量结果，Al0.25Ga0.75N / AlN / GaNAl0.25Ga0.75N ∕ AlN ∕ GaN样品对照明的响应更大，并且通过热退火显示出较小的恢复率。该结果表明，这些样品的缺陷构型坐标图的能级是不同的，这取决于它们的Al组成。

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